Zhen Zhang

    Professor in Solid-State Electronics, Department of Electrical Engineering, Uppsala University, Sweden

    E-mail: zhen.zhang@angstrom.uu.se

    時間: 2022年7月8日，15：00

    騰訊會議: 919-362-471

    聯(lián)系人:張明

Biography

Prof. Zhen Zhang is currently a full professor insolid-state electronicsat the Department of Electrical Engineering, Uppsala University, Sweden and an adjunct researcher with IBM T. J. Watson Research Center, Yorktown Heights, New York. Before joining Uppsala University as a tenure track assistant professor in Aug. 2013, he was a postdoctoral research fellow (2008-2010) then a Research Staff Member (2010-2013) at IBM T. J. Watson Research Center. Prof. Zhang received his Ph.D degree from the Royal Institute of Technology (KTH), Sweden in 2008. He got the M.Sc degree at Chinese Academy of Sciences in 2003 and the B.Sc. degree at University of Science and Technology of China (USTC) in 2000.

Prof. Zhang received 12 Invention Achievement Awards from IBM CEO Office. He was also a recipient of the Chinese Government Award for Outstanding Ph.D. Students Abroad in 2006, a recipient of the Ingvar Clarsson Award from the Swedish Strategic Research Foundation (SSF) in 2013, the Young Researcher Grant from the Swedish Research Council (VR) in 2014, and a recipient of the G?ran Gustafssons Prize in 2014. He was appointed Wallenberg Academy Fellow in 2015, SSF Future Research Leader in 2016, and Wallenberg Senior Academy Fellow in 2020.

Research Interests

Silicon technology, nanofabrication, nanoelectronics and nanosensors.

Abstract

Electrical sensors have been widely explored for the analysis of chemical/biological species. Ion detection with single charge resolution is the ultimate sensitivity goal of such sensors, which is yet to be experimentally demonstrated. In this work, the events of capturing and emitting a single hydrogen ion (H⁺) at solid/liquid interface are directly detected, using sub-10 nm electrical double layer (EDL) gated silicon nanowire field-effect transistors (SiNWFETs). The SiNWFETs are fabricated using a CMOS-compatible process, with a surface reassembling step to minimize the device noise. Individually activated surface Si dangling bond (DB) acts as the single H⁺receptor. Discrete current signals, generated by the single H⁺-DB interactions via local Coulomb scattering, are directly detected by the SiNWFETs. The single H⁺-DB interaction kinetics is systematically investigated. Our SiNWFETs demonstrate unprecedented capability for electrical sensing applications, especially for investigating the physics of solid/liquid interfacial interactions at single charge level.